Deep Reactive Ion Etching. Deep reactiveion etching ( DRIE) is a highly anisotropic etch process used to create deep penetration steepsided holes and trenches in wafers.
An optimized hardware for balanced RF drive at high power levels (3 kW) of the inductive plasma source in combination with spatial ion discrimination and collimation yields etchrates in excess of 10 μm/min with excellent uniformity of profile and rate distribution (±15% over 6 in wafers 20% open area).
What is the Bosch Process (Deep Reactive Ion Etching
PDF fileDeep reactiveion etching (DRIE) is used to produce highaspectratio structures in wafers Deep steepsided holes and trenches can be easily created in the wafers using DRIE (See Figure 2) The primary technology of DRIE is the Bosch process which was named after the German company Robert Bosch which filed the original patent.
Reactiveion etching Wikipedia
When performing anisotropic etching with Bosch process at high pressure a rougher bottom surface is observed This is the root cause for a wellknown defect in.
Challenges, developments and applications of silicon deep
Using this feature depth as a guide we will discuss the two common etching methods for deep reactive ion etching of silicon (DRIE) DRIE has traditionally been divided into two process approaches The first technology has been referred to by several names which unfortunately can lead to confusion.
Introduction To Si Drie Silicon Deep Reactive Ion Etching Samco Inc
Deep reactiveion etching WikiMili, The Best Wikipedia
Deep Reactive Ion Etching (DRIE) Corial
Deep Reactive Ion … Etching an overview ScienceDirect
Reactiveion Etching (RIE) VS Deep Reactiveion Etching (DRIE)
US20090242512A1 Deep reactive ion etching Google Patents
to Etching Introduction Deep Reactive Ion
Introduction to SiDRIE (Silicon Deep Reactive Ion Etching
Deep reactive ion etching LNF Wiki
Reactive ion etching LNF Wiki
Deep Reactive Ion Etching (DRIE) Oxford Instruments
Maximum achievable aspect reactive ion ratio in deep
DRIE (Deep Reactive Ion Etch) High aspect ratio (up to 501 aspect ratio sidewall angle 895° to 898° and etch rate up to 16 µm/min etch depths < 1µm to > 1000 µm) Positive profile and isotropic etching Proven processes for heat sensitive membrane or mirror release etch Extensive experience with throughwafer etches.